BQ34Z100 RAM/FLASH Endian Swap

Hello I am working on an application to set values in the FLASH.

Am I correct that the values held in FLASH are stored MSByte first and RAM variables are read LSByte first?

slua665 Going To Production document has code examples where the MSByte is written first.

yRowData(15) = (iSerialNum \ 256) '//MSByte
yRowData(16) = iSerialNum - (yRowData(0) * 256) '//LSByte

But when reading the values from the RAM they appear to be the oposite endian, is this correct? As are the addresses.

Thanks