Part Number:CSD19535KCS
As per the datasheet Rds(on)max=3.6mOHM with test condition like Id=100Amp.
If i allow to flow Id=100Amp continuous from MOSFET with Rds(on)max=3.6mOHM then i would have to dissipate Pd=36W(Pd=Id^2 * Rds(on)).
Now if i calculate Tj(Junction Temperature) without heat sink for above condition.
Tj=(Pd * Rtheta(ja)) + Ta,
=(36W * 62deg C/W) + 25deg C,
=2257deg C,
So without heat sink i can not even dissipate Pd=36W of power from MOSFET because, Tj would be out of specs.
I would like to know how TI has managed Tj within safe limits?
What different techniques is followed while testing this product?