Part Number:UCC28780
Question: everybody is suggesting the use of general MOSFET drivers to adapt to GaN by adjusting to 5V drive levels.
So, why can I not use UCC24610 for driving the synchronous switch which we choose to be EPC2034 instead of a MOSFET will extreme parasitcs? Other than that the voltage controlled enhancement mode switches have "similar" V-I characteristics notwithstanding different physics of the devices. Their Vgs- I transfer characteristics are also "similar".
In fact, other than super high slew rate of switching, one is able to replace all topologies from traditional MOSFETs to GaN, yes?
In the Active Clamp based controller UCC28780, is there any reason this wont apply?- i.e., replacing the suggested MOSFET to GaN?
just trying to be "innovative" here!
I have already suggested using UCC24612 with 5V by following what the datasheet says: that all internal circuitry is run from 5V generated by internal LDO & ouptut at REG pin. So if one leaves VDD pin unsed & connects 5V regulated by an LDO to drive a GaN?
If UCC24610 already does it, yes, of course, we would use it- saves many tiny components for us.
r